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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-3P(I) package *High collector breakdown voltage VCEO=400V(Min) *Excellent switching times : tr=1.0s(Max.) tf=1.0s(Max.)@ IC=4A APPLICATIONS *Switching regulator and high voltage switching applications *High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC2555
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 80 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 8 10 4 2.5 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 400 500 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
2SC2555
TYP.
MAX
UNIT V V
1.0 1.5 100 1.0
V V A mA
Switching times tr tstg tf Rise time Storage time Fall time VCC?200V; RL=50A IB1=-IB2=0.4A 1.0 2.5 1.0 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2555
Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2555
4


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